Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

TSMC is evolving its strategy by developing distinct leading-edge process technologies optimized for AI, client, and HPC ...

In the Valley, we go back to the AT&T, Bell Labs, Western Electric,” said Doug Dopp, a senior manufacturing director at ...

Ansys (NASDAQ: ANSS) today announced thermal and multiphysics signoff tool certifications for designs manufactured with Intel ...

Opening the door to third-party chiplet makers requires new approaches, greater diligence, and a deeper focus on security.

and with deadtime relaxed, there is broader controller compatibility resulting in simpler design. The first of several GaN ...

New GPU plugs gaps left by banned H20 chips Nvidia is pushing production of its new B300 AI chip forward to May, using Taiwan ...

Intel opened its Intel Foundry Direct Connect customer-focused event Tuesday in San Jose with a keynote by CEO Lip-Bu Tan, ...

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Silicon Valley startup Lightmatter revealed on Wednesday it had developed a new type of computer chip that could both speed ...

Siemens is a founding partner of the Intel Foundry Accelerator Chiplet Alliance – enabling a new and compelling  solution for ...