Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

In some ways, the very term “voltage divider” explains itself. It refers to a simple, passive circuit in which multiple ...

show that it is possible to design reliable GaN-based power amplifiers to avoid positive bias instability and enable handset applications for 6G communication. GaN MISHEMTs are being explored for use ...

Quantum technology will fundamentally change the landscape in finance, medicine, and fusion research, among other fields. But ...

TI launches a new automotive LiDAR laser driver, mmWave radar sensor, and BAW clocks, targeting improvements in vehicle ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

RF and Microwave Power Amplifiers is a comprehensive ... the most critical areas of RF design, including Laterally Diffused Metal-Oxide-Semiconductor (LDMOS), Gallium Nitride (GaN), and Heterojunction ...

Based on a simplified large-signal transistor ... the proposed design scheme is applied in a full H-band amplifier-doubler chain in 0.13-μm SiGe BiCMOS. The fabricated chain demonstrates up to 4.7-dBm ...

Lelantos Inc. (New York, NY) - $75,000. Lelantos is a developer of miniaturized semiconductor gas sensors based in New York, ...

One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

CML Micro’s single- and two-stage GaAs power amplifiers target a range of dual-cell lithium battery-powered wireless devices.