A direct-coupled monolithic IF amplifier that incorporates an active gain control stage and exhibits a power gain of 50 dB and an AGC range of 60 dB at 50 MHz is described. This circuit has negligible ...

It makes use of a SiC-based GaN field effect transistor (FET) with a 0.25μ m gate length. Without the need for additional circuitry, the three-stage high-performance amplifier for X band MMICs is ...