Chinese researchers claim to have developed the fastest non volatile flash memory to date, but it needs a better name than ...

To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world ...

NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

Chinese scientists at Fudan University unveil Poxaio, the world’s fastest flash memory, capable of rewriting data in just 400 ...

In conjunction with Flash memory, this is indeed an obstacle in achieving data integrity. File systems provide a file-based structure on top of the logical block address space and also implement ...

(1) For Adobe's multimedia authoring and playback system, see Flash. Flash memory turned out to be a bad naming choice, because people confuse flash memory (permanent storage) with regular memory ...

Chinese researchers from Fudan University have developed a prototype of a new generation of flash memory capable of recording data at a ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented ...

a flash memory in which transistor dies are stacked vertically to increase storage density. Patent applications made public in late March include an improved stacking structure to resist potential ...