Since the discovery of graphene in 2004, research over the past two decades has advanced the use of 2D materials in ...

GaN is especially well-established in low-power applications like chargers for personal electronics, while silicon and SiC ...

Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

The difference between high-side and low-side power switching is not apparent to many new designers but is a critical aspect ...

Q: What’s the basic circuit on/off power arrangement? A: It starts with a source (battery or AC line), an on/off switch, and ...

UC Santa Barbara researchers have developed a new framework to create scalable 3D transistors using 2D semiconductors, ...

Conventional electronics based on silicon are approaching their limits in terms of performance and scalability. In recent ...

Preparing to offer just that in significant volume within the next few years is the Israeli-based producer of GaN power ...

School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea ...

Another way is building 3D chips, which squeeze more transistors into the same area without making transistors smaller. Kim’s team did both, building a 3D chip out of vertically stacked 2D ...

Department of Electronic Engineering, Jeonbuk National University, 567 Baekje-daero, Deokjin-gu, Jeonju 54896, Republic of Korea ...