One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Wave and terahertz tech are reshaping RF with ultra-fast 6G, precision imaging, and sensing, driving innovation in components ...

Imec has demonstrated that, despite their positive bias (on-state) instability GaN MISHEMTs (Metal-Insulator-Semiconductor High Electron Mobility ...

Organic Bioelectronics Laboratory, Biological and Environmental Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia ...

show that it is possible to design reliable GaN-based power amplifiers to avoid positive bias instability and enable handset applications for 6G communication. GaN MISHEMTs are being explored for use ...

These findings support the design of reliable GaN-based power amplifiers to avoid positive bias instability and thus enable handset applications for 6G communication. GaN MISHEMTs are being explored ...

Altum RF, a supplier of RF to mmWave semiconductor solutions, is opening a new and larger office for its Sydney Design centre. This expansion is driven by growing business demands and includes both ...