Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Capacitors with unique construction and failure modes are placed on the AC line to manage EMI modes and ensure user safety.

Until now, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

As a result, power design engineers often require an external Schottky diode in parallel with the GaN transistor or try to reduce dead-times via their controllers. The new CoolGaN Transistor G5 offers ...

Third quadrant conduction is possible, for example, with the use of the MOSFETs body diode or adding an anti-parallel diode with the IGBT. This allows reverse conduction flow, but without any gate ...

Until now, power design engineers often required an external Schottky diode in parallel with the GaN transistor or tried to reduce dead-times via their controllers. All of which is extra effort, time, ...