While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...

The Model 100W1000B, when used with a sweep generator, will provide a minimum of 100 watts of RF power. The Model 100W1000B is a portable, self-contained, air-cooled, broadband, completely solid-state ...

The efficiency of linear RF power amplifiers in which transistors are operated as dependent current sources such as Class A power amplifier is low at low levels of the output voltage as compared to ...

This project outlines the design and implementation of the RF ... the transistor, noise figure circles were plotted for the device at 10GHz, and the input impedance was then matched close to the ...

RF power amplifier design requires that measurements be made within a predefined region of the Smith chart to uniquely identify optimum terminating impedances and performance. This chapter discusses ...

The QPD0020 is a 35 Watt unmatched discrete GaN on SiC HEMT which operates from DC to 6 GHz on a +48 V supply rail. It is ideally suited for base station, radar and communications applications and can ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.