The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of ...

Compound Semiconductor™ is an Angel Business Communications publication.

The company says this first standard-specification SiC-MOSFET will enable the company to respond to the diversification of inverters for xEVs and contribute to the growing popularity of these vehicles ...

Demo developed with IFP Energies Nouvelles delivers high 30 kW/l power density and ease of paralleling Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN), a French public research and ...

Company to use funds to expand manufacturing of SiC wafers for EVs As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 million ...

Violumas, a US-based provider of high-power UV LEDs, has launched 275nm and 265nm LEDs in mid-power, high-power, and high-density packages. The radiant flux of the LEDs is 35-50 percent higher than ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Chinese SiC wafer company exhibits first 300mm N-type SiC substrate at Electronica 2024 At Electronica 2024, Chinese SiC wafer company SICC will exhibit what is thought be the first 300mm N-type SiC ...

X-FAB and SMART Photonics recently signed a Memorandum of Understanding to formalise their collaboration. The aim is to ...

Compound Semiconductor™ is an Angel Business Communications publication.

For its second quarter of fiscal 2025, Wolfspeed targets revenue from continuing operations in a range of $160 million to ...

At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.