Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Add Yahoo as a preferred source to see more of our stories on Google. MIT engineers have developed a magnetic transistor that could pave the way for smaller, faster, and more efficient electronics. By ...

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

Efficient Power Conversion Corporation has extended the company's family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, the ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Have you ever heard of topological insulators? These are exotic materials where electricity flows only on the surface with very little loss. Now, according to IEEE Spectrum, scientists at Harvard have ...

The market offers opportunities in high-impedance, low-noise applications, driven by growth in consumer electronics, ...