The first of several GaN transistors with integrated Schottky diode is the 100 V 1.5 mΩ transistor in a 3 x 5 mm PQFN package. Engineering samples and target datasheet are available upon request.

Beyond the power variant, it sometimes seems as though we rarely encounter a discrete transistor these days, such has been the advance of integrated electronics. But they have a rich history ...

Infineon Technologies AG has released the world's first GaN power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN Transistors G5 with ...

The package for both devices, called ‘G’, is hermetic and measures 8 x 5.6mm. “The G-package family offers the lowest on-resistance of any packaged rad hard transistor currently on the market,” ...