Renesas Electronics Corporation introduced 12 new product versions in the RMLV0416E, RMLV0414E, and RMLV0408E series of Advanced Low-Power SRAM (Advanced LP SRAM), the company’s flagship SRAM (static ...
RAM consists of a grid of memory cells, each capable of storing a small amount of data, typically one bit (binary digit) or a few bits. These cells are organized into rows and columns, forming a ...
AI is driving demand and higher prices for DRAM and NAND into 2026. Products using non-volatile memories to replace NOR and ...
The 23LCV512 is a 512 kbit SPI serial static random-acess memory (SRAM) with battery backup and SDI interface. This device features uses low power CMOS technology and features unlimited read and write ...
Researchers at Tohoku University have announced the demonstration of high-speed spin-orbit-torque (SOT) magnetoresistive random access memory cell compatible with 300 mm Si CMOS technology. The demand ...
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