While LDMOS transistors aren’t exactly new – laterally-diffused MOSFETs have been appearing in RF power applications for decades – the particular parts used for the amp, NXP’s MRF300 power ...

This chapter deals with the theory and design of amplifiers using GaAs FETs ... The gain parameters of a microwave transistor can be completely specified by a set of 2 port parameters, the so-called ...

The aim is to provide an introduction to the theoretical and practical aspects of RF and microwave circuit design. This includes a detailed study of RF transistor amplifier design, covering RF ...

Further, the simplicity of the pixel models (when compared to frequently encountered analog components such as amplifiers ... the ASI and transistor levels. Progress in chip technology and ...