The MSK3003 is a 3-phase bridge MOSFET power module that employs space efficient isolated ceramic tab power SIP package. This device interfaces directly with most brushless motor drive IC’s without ...
SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...
The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...
Called VOMDA1271, “the component is available in a SOP-4 housing. The driver is the only one of its kind in this package size with an isolation voltage of 3.750 V [sic] and a typical open-circuit ...
CISSOID, a specialist in high temperature semiconductors, has announced a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. The IPM technology offers an all-in-one ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
SemiQ has announced a family of co-packaged 1200 V SOT-227 MOSFET modules based on its third-generation SiC technology. 1200 V Gen3 SiC MOSFET modules Credit: SemiQ In addition to smaller die sizes, ...
SemiQ has created a line of 1,200V SiC mosfet SOT-227 modules with Rds(on) at 7.4. 15 or 34mΩ. There are six models, half have ‘GCMX’ part numbers and just have a mosfet, while the others, GCMS types, ...
Infineon expanded its EiceDRIVER family with new isolated gate-driver ICs designed for electric vehicles. The parts support the latest IGBT and SiC technologies, including the HybridPACK Drive G2 ...
The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...
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