NOR flash memory wiring and structure on silicon (Credit: Cyferz, Wikimedia) To write a NOR Flash cell (set it to logical ‘0’), an elevated voltage is applied to the control gate, inducing HCI.

In the world of flash memory, two primary types dominate the market: NOR flash and NAND flash. While they both serve as essential components in various electronic devices, they differ significantly in ...

Professor Zhou Peng and his team at Fudan University completely reconfigured the structure of Flash memory where instead of traditional silicon, they used two-dimensional Dirac graphene ...

set out to close this performance gap by rethinking the physical structure of flash memory. Rather than using conventional silicon, the researchers turned to graphene – a two-dimensional ...

Chinese researchers have developed super-fast non volatile flash memory Graphene channel enables ... Its thin-body structure enhances horizontal electric fields, improving carrier acceleration ...

However, this new type of flash memory could boost performance significantly, and its structure also allows it to work well with silicon carbide.

This structure allows for the realization of 3D flash memory with high bit density and reliability at low cost. Paper Title: Superior Scalability of Advanced Horizontal Channel Flash For Future ...

NAND flash memory, one of the most prevalent technologies for mass data storage, can store more data in the same area by stacking cells in a three-dimensional structure rather than a planar one.

Samsung and most other major NAND flash manufacturers have so far exposed all memory structures on a single wafer: the logic for controlling the memory is located on the base level, with the ...