Samsung Foundry Hits Major 4nm Breakthrough in Yield Race

Samsung Electronics’s foundry division has reportedly reached an important production milestone in its 4nm FinFET ...
Semiconductor Engineering

Process Variation Analysis Of Device Performance Using Virtual Fabrication — Methodology Demonstrated On A CMOS 14-nm FinFET Vehicle

A new methodology to assess the impact of fabrication inherent process variability on 14-nm fin field effect transistor (FinFET) device performance. August 18th, 2021 - By: Coventor A new methodology ...
ExtremeTech

GlobalFoundries announces new 7nm FinFET process, full node shrink

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Design And Reuse

Samsung Foundry 4nm FinFET: Scaling Built on Maturity

A Scalable Platform Built on Proven Maturity. Samsung Foundry’s 4nm FinFET process represents a well-balanced optimization of ...
EDN

IP Design Kits Employ 12-nm FinFET Process Technology

Analog Bits announced the availability of analog and mixed-signal IP design kits for GlobalFoundries’ 12-nm Leading-Performance (12LP) FinFET semiconductor manufacturing process. The IP portfolio ...
Fudzilla

Globalfoundries improves EUV yield

Globalfoundries has improved its extreme ultraviolet (EUV) mask yield rate to nearly 65 percent and made progress in its movement to EUV lithography. Company CTO Gary Patton told the assembled throngs ...