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WEBScientists find new way to make efficient perovskite LEDs. Irradiation-hardened GaN HEMTs. Technique offers fast, large-area deposition of 2D films. WHU team takes inspiration from moths to boost GaN LEDs. Wet chemical etching for defect-free AlGaInP red micro-LEDs. Raising the bar for β-Ga₂O₃ diodes.
Magazine details for - Compound Semiconductor
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News - Compound Semiconductor
WEB2 days ago · You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.
Infineon to build world’s largest 200mm SiC fab in Kulim
WEBAug 3, 2023 · Infineon Technologies is significantly expanding its Kulim fab – over and above the original investment announced in February 2022 – to build the world’s largest 200mm SiC power fab. The planned expansion in Malaysia is backed by customer commitments covering about €5 billion of new design …
ON Semi announces SiC MOSFET modules for Charging EVs
WEBJun 7, 2021 · Wide bandgap devices for high-performance charging solutions launched at APEC 2021. ON Semiconductor has announced a pair of 1200 V full SiC MOSFET 2-PACK modules further enhancing their range of products suitable for the challenging electric vehicle (EV) market. As sales of EV continue to grow, …
2021 IEDM to highlight novel semiconductor technology
WEBAug 17, 2021 · The 67th annual IEDM is scheduled for December 11–15, 2021 at the Hilton San Francisco Union Square hotel under the theme 'Devices for a New Era of Electronics: From 2D Materials to 3D Architectures'. While the comprehensive technical program for the 2021 IEEE International Electron Devices Meeting (IEDM) will be finalised in the fall, the ...
Shifting to 200 mm silicon carbide - News - Compound …
WEBFor the ease of achieving good wafer geometry, there is an increase in wafer thickness as the wafer diameter grows. 150 mm-diameter SiC wafers have a thickness of 350 μm, and the initial 200 mm SiC substrates introduced to the market will be 500 μm-thick. As increased thickness reduces the number of wafers made from each puck, there is a ...
BelGaN acquires ON Semiconductor Belgium fab - News
WEBFeb 18, 2022 · BelGaN Group BV has completed the acquisition of all shares of ON Semiconductor Belgium BV from the Onsemi group. The site in Oudenaarde (. BelGaN aims to become a leading 6 inch and 8 inch GaN automotive semiconductor foundry in Europe. Part of its vision is to develop a growing ecosystem in Europe and beyond for GaN-based chips and power ...
Soitec acquires NOVASiC to strengthen SiC wafer tech
WEBNov 30, 2021 · Grenoble-based Soitec has acquired NOVASiC, a French company specialised in polishing and reclaiming wafers on SiC. The acquisition allows Soitec to drive the development of semiconductors for power supply systems in electromobility and industrial applications. The closing of the transaction is expected before the …
Enkris demonstrates 300mm GaN-on-Si HEMT wafers
WEBSep 23, 2021 · The 300mm GaN-on-Si HEMT epitaxial layer structure adopted to solve the key issues of wafer cracking/bow and high crystalline defects is shown above in figure 2 (a). The growth starts with an AlN nucleation layer, followed by a strain relief stack, GaN channel, AlGaN barrier and GaN cap. The narrow XRD AlN (002) peak and a …